Effect of P-base sheet and contact resistances on static current-voltage characteristics of scaled low-voltage vertical power DMOSFET'sSHENAI, K.IEEE electron device letters. 1991, Vol 12, Num 6, pp 270-272, issn 0741-3106, 3 p.Article

A novel offset gated polysilicon thin film transistor without an additional offset maskBYUNG-HYUK MIN; CHEOL-MIN PARK; MIN-KOO HAN et al.IEEE electron device letters. 1995, Vol 16, Num 5, pp 161-163, issn 0741-3106Article

LDMOS in SOI technology with very-thin silicon filmBAWEDIN, M; RENAUX, C; FLANDRE, D et al.Solid-state electronics. 2004, Vol 48, Num 12, pp 2263-2270, issn 0038-1101, 8 p.Article

Moderate kink effect in fully depleted thin-film SOI MOSFETsBALESTRA, F; MATSUMOTO, T; TSUNO, M et al.Electronics Letters. 1995, Vol 31, Num 4, pp 326-327, issn 0013-5194Article

A physical model of floating body effects in polysilicon thin film transistorsWU, W. J; YAO, R. H; CHEN, T et al.Solid-state electronics. 2008, Vol 52, Num 6, pp 930-936, issn 0038-1101, 7 p.Article

Determination of dispersion of output conductance and transconductance of InP HEMTs using low frequency S-parameter measurementsKLEPSER, B.-U. H; PATRICK, W.Electronics Letters. 1995, Vol 31, Num 15, pp 1294-1295, issn 0013-5194Article

Electroluminescence from InGaAs/InAlAs HEMTsWOODHEAD, J; REDDY, M; DAVID, J. P. R et al.Electronics Letters. 1994, Vol 30, Num 14, pp 1181-1183, issn 0013-5194Article

The Kink Phenomenon in the Transistor S₂₂: . A Systematic and Numerical ApproachCRUPI, Giovanni; RAFFO, Antonio; CADDEMI, Alina et al.IEEE microwave and wireless components letters. 2012, Vol 22, Num 8, pp 406-408, issn 1531-1309, 3 p.Article

Bridged-Grain Polycrystalline Silicon Thin-Film TransistorsSHUYUN ZHAO; ZHIGUO MENG; WEI ZHOU et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 6, pp 1965-1970, issn 0018-9383, 6 p.Article

Suppression of corner effects in wide-channel triple-gate bulk FinFETsPOLJAK, Mirko; JOVANOVIC, Vladimir; SULIGOJ, Tomislav et al.Microelectronic engineering. 2010, Vol 87, Num 2, pp 192-199, issn 0167-9317, 8 p.Article

Kink effect on the base current of heterojunction bipolar transistorsLIOU, J. J; LIOU, L. L; HUANG, C. I et al.Solid-state electronics. 1993, Vol 36, Num 8, pp 1222-1224, issn 0038-1101Article

Low-temperature operation of polycrystalline silicon thin-film transistorsMORI, H; HATA, K; HASHIMOTO, T et al.Japanese journal of applied physics. 1991, Vol 30, Num 12B, pp 3710-3714, issn 0021-4922, 1Article

Microwave FinFET modeling based on artificial neural networks including lossy silicon substrateMARINKOVIC, Zlatica; CRUPI, Giovanni; SCHREURS, Dominique M. M.-P et al.Microelectronic engineering. 2011, Vol 88, Num 10, pp 3158-3163, issn 0167-9317, 6 p.Article

Capacitance-voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTsTANG, Z; WIE, C. R.Solid-state electronics. 2010, Vol 54, Num 3, pp 259-267, issn 0038-1101, 9 p.Article

130-nm partially depleted SOI MOSFET nonlinear model including the kink effect for linearity properties investigationSILIGARIS, Alexandre; DAMBRINE, Gilles; SCHREURS, Dominique et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 12, pp 2809-2812, issn 0018-9383, 4 p.Article

Short channel effects in polysilicon thin film transistorsFORTUNATO, G; VALLETTA, A; GAUCCI, P et al.Thin solid films. 2005, Vol 487, Num 1-2, pp 221-226, issn 0040-6090, 6 p.Conference Paper

Transient response measurement of kink effect in InAlAs/InGaAs/InP HEMTsKRUPPA, W; BOOS, J. B.Electronics Letters. 1994, Vol 30, Num 4, pp 368-369, issn 0013-5194Article

Photoemissions related to the kink effect in GaAs metal-semiconductor field-effect transistors with an Al_0.2Ga_0.8As/GaAs buffer layerHARUYAMA, J; GOTO, N; NASHIMOTO, Y et al.Applied physics letters. 1993, Vol 63, Num 5, pp 648-650, issn 0003-6951Article

Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET'sJIN-YOUNG CHOI; FOSSUM, J. G.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 6, pp 1384-1391, issn 0018-9383Article

Poly-Si Nanowire TFT With Raised Source/Drain and Nitride SpacerKANG, Tsung-Kuei; YANG, Ysung-Yu.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 7, pp 2415-2418, issn 0018-9383, 4 p.Article

On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT : An experimental study down to cryogenic temperatureCADDEMI, A; CRUPI, G; DONATE, N et al.Solid-state electronics. 2005, Vol 49, Num 6, pp 928-934, issn 0038-1101, 7 p.Article

Temperature analysis of polysilicon thin-film transistors made by excimer laser crystallizationFOGLIETTI, V; MARIUCCI, L; FORTUNATO, G et al.Thin solid films. 1999, Vol 337, Num 1-2, pp 196-199, issn 0040-6090Conference Paper

ETUDE DES EFFETS PARASITES DANS LES TRANSISTORS A EFFET DE CHAMP A HETEROJONCTION (HFET) SUR SUBSTRAT InP = STUDY OF PARASITIC EFFECTS ON THE HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET) ON InP SUBSTRATESGeorgescu, Bogdan Iulian; Guillot, Gerard.1998, 147 p.Thesis

Analysis of kink-related backgating effect in GaAs MESFETHORIO, K; USAMI, K.IEEE electron device letters. 1995, Vol 16, Num 6, pp 277-279, issn 0741-3106Article

Body contacts in InP-based InAlAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppressionSUEMITSU, T; ENOKI, T; ISHII, Y et al.Electronics Letters. 1995, Vol 31, Num 9, pp 758-759, issn 0013-5194Article